Datasheet SKW07N120 - Infineon IGBT, NPT, 1200 V, 16.5 A, 125 W, TO247 — Datenblatt

Infineon SKW07N120

Part Number: SKW07N120

Detaillierte Beschreibung

Manufacturer: Infineon

Description: IGBT, NPT, 1200 V, 16.5 A, 125 W, TO247

Docket:
SKW07N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
· Lower Eoff compared to previous generation · Short circuit withstand time 10 µs · Designed for: - Motor controls - Inverter - SMPS · NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability · Qualified according to JEDEC1 for target applications · Pb-free lead plating; RoHS compliant · Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKW07N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063

Specifications:

Collector Emitter Voltage V(br)ceo: 1.2 kV
Collector Emitter Voltage Vces: 3.1 V
DC Collector Current: 16.5 A
Number of Pins: 3
Operating Temperature Range: -55°C to +150°C
Power Dissipation: 125 W
Pulsed Current Icm: 27 A
Rise Time: 31 ns
Transistor Case Style: TO-247
Transistor Type: IGBT
RoHS: Yes