Datasheet SGW25N120 - Infineon IGBT, NPT, 1200 V, 46 A, 313 W, TO247-3 — Datenblatt

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Manufacturer: Infineon

Description: IGBT, NPT, 1200 V, 46 A, 313 W, TO247-3

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Docket:
SGW25N120
Fast IGBT in NPT-technology
· 40% lower Eoff compared to previous generation · Short circuit withstand time ­ 10 µs · Designed for: - Motor controls - Inverter - SMPS · NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability · Qualified according to JEDEC1 for target applications · Pb-free lead plating; RoHS compliant · Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGW25N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 25A, VCC = 50V, RGE = 25, start at Tj = 25°C Short circuit withstand time2 VGE = 15V, 100V VCC 1200V, Tj 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj ,

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 3.1 V
• DC Collector Current: 46 A
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 313 W
• Pulsed Current Icm: 84 A
• Rise Time: 52 ns
• Transistor Case Style: TO-247
• Transistor Type: IGBT
• RoHS: Yes