Datasheet SPD18P06P G - Infineon MOSFET, P-CH, 60 V, 18.6 A, TO-252 — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, P-CH, 60 V, 18.6 A, TO-252

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Docket:
SPD18P06P G SIPMOS ® Power-Transistor
Features
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Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current
P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature

Specifications:

• Continuous Drain Current Id: -18.6 A
• Drain Source Voltage Vds: -60 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 3
• On Resistance Rds(on): 0.1 Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation: 80 W
• Rds(on) Test Voltage Vgs: -10 V
• Threshold Voltage Vgs Typ: -3 V
• Transistor Case Style: TO-252
• Transistor Polarity: P Channel
• RoHS: Yes