Datasheet SPD04P10PL G - Infineon MOSFET, P-CH, 100 V, 4.2 A, TO252-3 — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, P-CH, 100 V, 4.2 A, TO252-3

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Docket:
SPD04P10PL G
SIPMOS Power-Transistor
®
Product Summary V DS R DS(on),max ID -100 850 -4.2 V m A
Features · P-Channel · Enhancement mode · Logic level · Avalanche rated · Pb-free lead plating; RoHS compliant

Specifications:

• Continuous Drain Current Id: -4.2 A
• Drain Source Voltage Vds: -100 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 3
• On Resistance Rds(on): 0.55 Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation: 38 W
• Rds(on) Test Voltage Vgs: -10 V
• Threshold Voltage Vgs Typ: -1.5 V
• Transistor Case Style: TO-252
• Transistor Polarity: P Channel
• RoHS: Yes