Datasheet SPB80P06P G - Infineon MOSFET, P-CH, 60 V, 80 A, TO-263 — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, P-CH, 60 V, 80 A, TO-263

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Docket:
SPB80P06P G SIPMOS ® Power-Transistor
Features
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Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current
P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature

Specifications:

• Continuous Drain Current Id: -80 A
• Drain Source Voltage Vds: -60 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 3
• On Resistance Rds(on): 0.021 Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation: 340 W
• Rds(on) Test Voltage Vgs: -10 V
• Threshold Voltage Vgs Typ: -3 V
• Transistor Case Style: TO-263
• Transistor Polarity: P Channel
• RoHS: Yes