Datasheet SPB08P06P G - Infineon MOSFET, P-CH, 60 V, 8.8 A, TO-263 — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, P-CH, 60 V, 8.8 A, TO-263

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Docket:
SPB08P06P G
SIPMOS Power-Transistor
®
Product Summary V DS R DS(on),max ID -60 0.3 -8.8 V A
Features · P-Channel · Enhancement mode · Avalanche rated · dv /dt rated · 175°C operating temperature · Pb-free lead finishing; RoHS compliant

Specifications:

• Continuous Drain Current Id: -8.8 A
• Drain Source Voltage Vds: -60 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 3
• On Resistance Rds(on): 0.221 Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation: 42 W
• Rds(on) Test Voltage Vgs: -10 V
• Threshold Voltage Vgs Typ: -3 V
• Transistor Case Style: TO-263
• Transistor Polarity: P Channel
• RoHS: Yes