Datasheet IPD60R1K4C6 - Infineon MOSFET, N-CH, 600 V, 3.2 A, TO252-3 — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, N-CH, 600 V, 3.2 A, TO252-3

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Docket:
GHL@?M
+ !FFC+ , 0 !
3 !FFC+ , 0 X ! - FN" 8K 0 ?<

Specifications:

• Continuous Drain Current Id: 3.2 A
• Drain Source Voltage Vds: 600 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 3
• On Resistance Rds(on): 1.26 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 28.4 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: TO-252
• Transistor Polarity: N Channel
• RoHS: Yes