Datasheet IPD600N25N3 G - Infineon MOSFET, N-CH, 250 V, 25 A, TO252-3 — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, N-CH, 250 V, 25 A, TO252-3

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Docket:
IPD600N25N3 G
OptiMOSTM3 Power-Transistor
Features · N-channel, normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · 175 °C operating temperature · Pb-free lead plating; RoHS compliant · Qualified according to JEDEC1) for target application · Halogen-free according to IEC61249-2-21
Product Summary VDS RDS(on),max ID 250 60 25 V mW A
· Ideal for high-frequency switching and synchronous rectification Type IPD600N25N3 G

Specifications:

• Continuous Drain Current Id: 25 A
• Drain Source Voltage Vds: 250 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 3
• On Resistance Rds(on): 0.051 Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation: 136 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: TO-252
• Transistor Polarity: N Channel
• RoHS: Yes