Datasheet IPD110N12N3 G - Infineon MOSFET, N-CH, 120 V, 75 A, TO252-3 — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, N-CH, 120 V, 75 A, TO252-3

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Docket:
IPD110N12N3 G IPS110N12N3 G
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Features R ( 492 ??6= ?@ C == 6= >2 6G R I46=6?E E 492 C IR ;I"[# AC 5F4E ) ' = 82 6 86 @ ! R/ 6C = H @ ?C :D 2 ?46 R ;I"[# J@ 6D E R U @ A6C E E 2 :?8 6>A6C E 6 2 FC R * 3 766 = 5 A= E , @ # - 4@ >A= ?E 92 = 86? 766 C 62 2 :?8 :2 @ C R + F2 = :65 2 44@ C :7 5:?8 E % @
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Specifications:

• Continuous Drain Current Id: 75 A
• Drain Source Voltage Vds: 120 V
• MSL: MSL 3 - 168 hours
• Number of Pins: 3
• On Resistance Rds(on): 0.0092 Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation: 136 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: TO-252
• Transistor Polarity: N Channel
• RoHS: Yes