Datasheet IPB036N12N3 G - Infineon MOSFET, N-CH, 120 V, 180 A, TO263-7 — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, N-CH, 120 V, 180 A, TO263-7

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Docket:
IPB036N12N3 G
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TM

Specifications:

• Continuous Drain Current Id: 180 A
• Drain Source Voltage Vds: 120 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 7
• On Resistance Rds(on): 0.0029 Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation: 300 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: TO-263
• Transistor Polarity: N Channel
• RoHS: Yes