Datasheet BSZ076N06NS3 G - Infineon MOSFET, N-CH, 60 V, 20 A, 8TSDSON — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, N-CH, 60 V, 20 A, 8TSDSON

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Docket:
Type
BSZ076N06NS3 G
OptiMOSTM3 Power-Transistor
Features · Ideal for high frequency switching and sync.

rec. · Optimized technology for DC/DC converters · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · N-channel, normal level · 100% avalanche tested · Pb-free plating; RoHS compliant · Qualified according to JEDEC1) for target applications · Halogen-free according to IEC61249-2-21 Type BSZ076N06NS3 G
Product Summary V DS R DS(on),max ID 60 7.6 20 V m A

Specifications:

• Continuous Drain Current Id: 20 A
• Drain Source Voltage Vds: 60 V
• MSL: MSL 3 - 168 hours
• Number of Pins: 8
• On Resistance Rds(on): 0.006 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 69 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: PG-TSDSON
• Transistor Polarity: N Channel
• RoHS: Yes