Datasheet BSS225 L6327 - Infineon MOSFET, N-CH, 600 V, 90 mA, SOT-89 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Infineon

Description: MOSFET, N-CH, 600 V, 90 mA, SOT-89

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Docket:
Type
BSS225
SIPMOS® Small-Signal-Transistor
Feature · n-channel · enhancement mode · Logic level · dv /dt rated · Qualified according to AEC Q101
Product Summary V DS

Specifications:

• Continuous Drain Current Id: 90 mA
• Drain Source Voltage Vds: 600 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 3
• On Resistance Rds(on): 28 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 1.9 V
• Transistor Case Style: SOT-89
• Transistor Polarity: N Channel
• RoHS: Yes