Datasheet BSS192P L6327 - Infineon MOSFET, P-CH, 250 V, 190 mA, SOT-89 — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, P-CH, 250 V, 190 mA, SOT-89

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Docket:
BSS192P SIPMOS Small-Signal-Transistor
Feature · P-Channel · Enhancement mode · Logic Level · dv/dt rated
Product Summary VDS RDS(on) ID -250 12 -0.19
PG-SOT89
Drain pin 2 Gate pin1 Source pin 3

Specifications:

• Continuous Drain Current Id: -190 mA
• Drain Source Voltage Vds: -250 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 3
• On Resistance Rds(on): 7.7 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1 W
• Rds(on) Test Voltage Vgs: -10 V
• Threshold Voltage Vgs Typ: -1.5 V
• Transistor Case Style: SOT-89
• Transistor Polarity: P Channel
• RoHS: Yes