Datasheet BSP613P L6327 - Infineon MOSFET, P-CH, 60 V, 2.9 A, SOT-223 — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, P-CH, 60 V, 2.9 A, SOT-223

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Docket:
BSP613P SIPMOS ® Small-Signal-Transistor
Feature · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated · Ideal for fast switching buck converter
· Qualified according to AEC Q101
Gate pin1 Source pin 3 Drain pin 2,4
Product Summary VDS RDS(on) ID -60 0.13 -2.9

Specifications:

• Continuous Drain Current Id: -2.9 A
• Drain Source Voltage Vds: -60 V
• MSL: MSL 3 - 168 hours
• Number of Pins: 4
• On Resistance Rds(on): 0.11 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1.8 W
• Rds(on) Test Voltage Vgs: -10 V
• Threshold Voltage Vgs Typ: -3 V
• Transistor Case Style: SOT-223
• Transistor Polarity: P Channel
• RoHS: Yes