Datasheet BSP170P L6327 - Infineon MOSFET, P-CH, 60 V, 1.9 A, SOT-223 — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, P-CH, 60 V, 1.9 A, SOT-223

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Docket:
BSP170P
SIPMOS® Small-Signal-Transistor
Features · P-Channel · Enhancement mode · Avalanche rated · dv /dt rated · Pb-free lead plating; RoHS compliant
Product Summary V DS R DS(on),max ID -60 0.3 -1.9 V A
PG-SOT223

Specifications:

• Continuous Drain Current Id: -1.9 A
• Drain Source Voltage Vds: -60 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 4
• On Resistance Rds(on): 0.239 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1.8 W
• Rds(on) Test Voltage Vgs: -10 V
• Threshold Voltage Vgs Typ: -3 V
• Transistor Case Style: SOT-223
• Transistor Polarity: P Channel
• RoHS: Yes