Datasheet BSP123 L6327 - Infineon MOSFET, N-CH, 100 V, 370 mA, SOT223 — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, N-CH, 100 V, 370 mA, SOT223

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Docket:
Rev.

1.5
BSP123
SIPMOS® Small-Signal-Transistor
Feature · N-Channel · Enhancement mode · Logic Level · dv/dt rated
Product Summary VDS RDS(on) ID 100 6 0.37

Specifications:

• Continuous Drain Current Id: 370 mA
• Drain Source Voltage Vds: 100 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 4
• On Resistance Rds(on): 3.5 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1.79 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 1.4 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• RoHS: Yes