Datasheet BSO615N G - Infineon MOSFET DUA, L N-CH 60 V, 2.6 A, 8SOIC — Datenblatt

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Manufacturer: Infineon

Description: MOSFET DUA, L N-CH 60 V, 2.6 A, 8SOIC

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Docket:
G
° Pb-free lead plating; RoHS compliant
° Qualified according to AEC Q101
Marking
615N

Specifications:

• Continuous Drain Current Id: 2.6 A
• Drain Source Voltage Vds: 60 V
• MSL: MSL 3 - 168 hours
• Number of Pins: 8
• On Resistance Rds(on): 0.12 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 2 W
• Rds(on) Test Voltage Vgs: 4.5 V
• Threshold Voltage Vgs Typ: 1.6 V
• Transistor Case Style: SOIC
• Transistor Polarity: Dual N Channel
• RoHS: Yes