Datasheet NGTB15N60S1EG - ON Semiconductor IGBT, 600 V, 15 A, W/ DIODE, TO-220-3 — Datenblatt

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Manufacturer: ON Semiconductor

Description: IGBT, 600 V, 15 A, W/ DIODE, TO-220-3

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Docket:
NGTB15N60S1EG IGBT - Short-Circuit Rated
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications.

Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged co-packaged reverse recovery diode with a low forward voltage.
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Specifications:

• Collector Emitter Voltage V(br)ceo: 600 V
• Collector Emitter Voltage Vces: 1.5 V
• DC Collector Current: 30 A
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 117 W
• Transistor Case Style: TO-220
• Transistor Type: IGBT
• RoHS: Yes
• SVHC: No SVHC (18-Jun-2012)