Datasheet SJDP170R1400 - SemiSouth JFET, SIC, N-ON, 1700 V, 3 A, TO247 — Datenblatt

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Manufacturer: SemiSouth

Description: JFET, SIC, N-ON, 1700 V, 3 A, TO247

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Docket:
Silicon Carbide
SJDP170R1400
Normally-On Trench Silicon Carbide Power JFET
Features: - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 ° C - RDS(on) max of 1.40 - Voltage Controlled - Low Gate Charge - Low Intrinsic Capacitance
4

Specifications:

• Breakdown Voltage Vbr: 1.7 kV
• MSL: MSL 1 - Unlimited
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 35 W
• Transistor Case Style: TO-247
• Transistor Type: JFET
• RoHS: Yes