Datasheet STD4N62K3 - STMicroelectronics MOSFET, N CH, 620 V, 3.8 A, DPAK — Datenblatt

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Manufacturer: STMicroelectronics

Description: MOSFET, N CH, 620 V, 3.8 A, DPAK

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Docket:
STB4N62K3, STD4N62K3
N-channel 620 V, 1.7 3.8 A SuperMESH3TM Power MOSFET , in D2PAK and DPAK packages
Datasheet -- production data
Features
Order codes STB4N62K3 STD4N62K3

Specifications:

• Continuous Drain Current Id: 3.8 A
• Drain Source Voltage Vds: 620 V
• MSL: MSL 3 - 168 hours
• Number of Pins: 3
• On Resistance Rds(on): 1.7 Ohm
• Power Dissipation: 70 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3.75 V
• Transistor Case Style: TO-252
• Transistor Polarity: N Channel
• RoHS: Yes
• SVHC: No SVHC (19-Dec-2011)