Datasheet SDB10S120 - SemiSouth DIODE, SIC, 1200 V, 10 A, TO-252 — Datenblatt

Detaillierte Beschreibung

Manufacturer: SemiSouth

Description: DIODE, SIC, 1200 V, 10 A, TO-252

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Docket:
Silicon Carbide
SDB10S120
Silicon Carbide Power Schottky Diode
Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage
Product Summary

Specifications:

• Diode Configuration: Single
• Diode Type: SiC Schottky
• Forward Current If(AV): 10 A
• Forward Surge Current Ifsm Max: 250 A
• Forward Voltage VF Max: 1.8 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 3
• Operating Temperature Range: -55°C to +175°C
• Package / Case: TO-252
• Repetitive Reverse Voltage Vrrm Max: 1.2 kV
• RoHS: Yes