Datasheet VS-GA75TS120UPBF - Vishay IGBT MODULE, 1200 V, 75 A, INT-A-PAK — Datenblatt

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Manufacturer: Vishay

Description: IGBT MODULE, 1200 V, 75 A, INT-A-PAK

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Docket:
GA75TS120UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 75 A
FEATURES
· Generation 4 IGBT technology · Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode · Very low conduction and switching losses · HEXFRED® antiparallel diodes with ultrasoft recovery · Industry standard package · UL approved file E78996

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 2.5 V
• DC Collector Current: 110 A
• Number of Pins: 3
• Operating Temperature Range: -40°C to +150°C
• Power Dissipation: 390 W
• Transistor Case Style: INT-A-PAK
• Transistor Polarity: NPN
• RoHS: Yes

Andere Namen:

VSGA75TS120UPBF, VS GA75TS120UPBF