Datasheet VS-GB75SA120UP - Vishay IGBT MODULE, 1200 V, 75 A, SOT-227 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: IGBT MODULE, 1200 V, 75 A, SOT-227

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Docket:
GB75SA120UP
www.vishay.com
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A
FEATURES

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 3.3 V
• DC Collector Current: 131 A
• Number of Pins: 4
• Operating Temperature Range: -40°C to +150°C
• Power Dissipation: 658 W
• Transistor Case Style: SOT-227
• Transistor Polarity: NPN
• RoHS: Yes

Andere Namen:

VSGB75SA120UP, VS GB75SA120UP