Datasheet NGTB25N120IHLWG - ON Semiconductor IGBT, 1200 V, 25 A, TO247 — Datenblatt

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Manufacturer: ON Semiconductor

Description: IGBT, 1200 V, 25 A, TO247

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Docket:
NGTB25N120IHLWG IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss.

The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.
Features
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Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 1.85 V
• DC Collector Current: 25 A
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 250 W
• Transistor Case Style: TO-247
• Transistor Type: IGBT
• RoHS: Yes
• SVHC: No SVHC (19-Dec-2011)