Datasheet NGB8207BNT4G - ON Semiconductor IGBT, IGNITION, N-CH, 365 V, 20 A, D2PAK — Datenblatt

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Manufacturer: ON Semiconductor

Description: IGBT, IGNITION, N-CH, 365 V, 20 A, D2PAK

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Docket:
NGB8207N, NGB8207BN Ignition IGBT
20 A, 365 V, N-Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications.

Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features
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Specifications:

• Collector Emitter Voltage V(br)ceo: 365 V
• Collector Emitter Voltage Vces: 1.5 V
• DC Collector Current: 20 A
• Number of Pins: 3
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation: 165 W
• Transistor Case Style: TO-263
• Transistor Type: IGBT
• RoHS: Yes
• SVHC: No SVHC (18-Jun-2012)