Datasheet MMBFJ309LT1G - ON Semiconductor TRANSISTOR, JFET, N, 25 V, SOT-23 — Datenblatt

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Manufacturer: ON Semiconductor

Description: TRANSISTOR, JFET, N, 25 V, SOT-23

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Docket:
MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor
N-Channel
Features http://onsemi.com
2 SOURCE
· AEC-Q101 Qualified and PPAP Capable · S Prefix for Automotive and Other Applications Requiring Unique ·

Specifications:

• Breakdown Voltage Vbr: 25 V
• Capacitance Ciss Max: 5 pF
• Current Idss Max: 30 mA
• Current Idss Min: 12 mA
• Drain Source Voltage Vds: 25 V
• Gate-Source Cutoff Voltage Vgs(off) Max: 4 V
• Mounting Type: SMD
• Number of Pins: 3
• Package / Case: SOT-23
• Power Dissipation Max: 225 mW
• Power Dissipation: 225 mW
• SMD Marking: 6 x
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Transistor Type: JFET
• Voltage Vgs Off Min: -1 V
• Zero Gate Voltage Drain Current Idss: 12 mA to 30 mA

RoHS: Yes