Datasheet BF511,215 - NXP JET, N CH, 20 V, SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: JET, N CH, 20 V, SOT-23

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
BF510 to 513 N-channel silicon field-effect transistors
Product specification December 1997
NXP Semiconductors

Specifications:

• Current Idss Max: 7 mA
• Current Idss Min: 2.5 mA
• Gate-Source Cutoff Voltage Vgs(off) Max: 1.5 V
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-23
• Power Dissipation: 250 mW
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Transistor Type: JFET
• Zero Gate Voltage Drain Current Idss: 3 mA

RoHS: Yes

Andere Namen:

BF511215, BF511 215