Datasheet 2SK3666-3-TB-E - Sanyo JFET, N CH, 30 V, 0.01 A, SOT23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Sanyo

Description: JFET, N CH, 30 V, 0.01 A, SOT23

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Specifications:

• Breakdown Voltage Vbr: 30 V
• Current Idss Max: 6 mA
• Current Idss Min: 600 µA
• Drain Source Voltage Vds: 30 V
• Gate-Source Cutoff Voltage Vgs(off) Max: 2.2 V
• Mounting Type: SMD
• Number of Pins: 3
• Package / Case: CP
• Power Dissipation: 200 mW
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Transistor Type: JFET
• Zero Gate Voltage Drain Current Idss: 600 µA to 6 mA

RoHS: Yes

Andere Namen:

2SK36663TBE, 2SK3666 3 TB E