Datasheet PMDT290UNE - NXP MOSFET, N CH, DUAL, 20 V, 800 mA, SOT666 — Datenblatt

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Manufacturer: NXP

Description: MOSFET, N CH, DUAL, 20 V, 800 mA, SOT666

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Docket:
SO T6
PMDT290UNE
20 V, 800 mA dual N-channel Trench MOSFET
Rev.

1 -- 13 September 2011 Product data sheet
1. Product profile

Specifications:

• Continuous Drain Current Id: 800 mA
• Drain Source Voltage Vds: 20 V
• Number of Pins: 6
• On Resistance Rds(on): 0.29 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 500 mW
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 750 mV
• Transistor Case Style: SOT-666
• Transistor Polarity: Dual N Channel

RoHS: Yes