Datasheet ZXMHC3F381N8TC - Diodes MOSFET, COMP, H/BRIDE, 30 V, SO8 — Datenblatt

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Manufacturer: Diodes

Description: MOSFET, COMP, H/BRIDE, 30 V, SO8

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Docket:
A Product Line of Diodes Incorporated
ZXMHC3F381N8
30V SO8 Complementary enhancement mode MOSFET H-Bridge
Summary
Device V(BR)DSS QG RDS(on) 33m @ VGS= 10V N-CH 30V 9.0nC 60m @ VGS= 4.5V 55m @ VGS= -10V P-CH -30V 12.7nC 80m @ VGS= -4.5V -3.3A 3.9A -4.1A ID TA= 25°C 5.0A

Specifications:

• Continuous Drain Current Id: 3.98 A
• Drain Source Voltage Vds: 30 V
• Module Configuration: Half Bridge
• Number of Pins: 8
• On Resistance Rds(on): 0.033 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 870 mW
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (20-Jun-2011)
• Transistor Case Style: SOIC
• Transistor Polarity: N and P Channel

RoHS: Yes