Datasheet ZXMHC3A01T8TA - Diodes MOSFET, COMP, H/BRIDE, 30 V, SO8 — Datenblatt

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Manufacturer: Diodes

Description: MOSFET, COMP, H/BRIDE, 30 V, SO8

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Docket:
ZXMHC3A01T8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE
SUMMARY N-Channel = V(BR)DSS= 30V : RDS(on)= 0.12 ; ID= 3.1A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.21 ; ID= -2.3A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.

This makes them ideal for high efficiency, low voltage, power management applications.

Specifications:

• Continuous Drain Current Id: 3.1 A
• Drain Source Voltage Vds: 30 V
• Module Configuration: Half Bridge
• Number of Pins: 8
• On Resistance Rds(on): 0.12 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1.3 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (20-Jun-2011)
• Transistor Case Style: SOIC
• Transistor Polarity: N and P Channel

RoHS: Yes