Datasheet DMN4800LSSL - Diodes MOSFET, N CH, W DIODE, 30 V, 8 A, SO8 — Datenblatt

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Manufacturer: Diodes

Description: MOSFET, N CH, W DIODE, 30 V, 8 A, SO8

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Docket:
DMN4800LSSL
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) 14m @ VGS = 10V 30V 20m @ VGS = 4.5V 6.7A ID max TA = 25°C 8.0A
Features and Benefits

Specifications:

• Continuous Drain Current Id: 6.7 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 8
• On Resistance Rds(on): 0.011 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1.46 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 1.2 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel

RoHS: Yes