Datasheet DMN3300U - Diodes MOSFET, N CH, W DIODE, 30 V, 2 A, SOT23 — Datenblatt

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Manufacturer: Diodes

Description: MOSFET, N CH, W DIODE, 30 V, 2 A, SOT23

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Docket:
DMN3300U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
· Low On-Resistance · 150 m @VGS = 4.5V · 200 m @VGS = 2.5V · 240 m @VGS = 1.8V · 300 m @VGS = 1.5V Ultra Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2, 3 and 5) Qualified to AEC-Q101 Standards for High Reliability

Specifications:

• Continuous Drain Current Id: 2 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 3
• On Resistance Rds(on): 0.1 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 600 mW
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (20-Jun-2011)
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel

RoHS: Yes