Datasheet SQ9945BEY-T1-GE3 - Vishay MOSFET, NN CH, W/D, 60 V, 6 A, SO8 — Datenblatt

Vishay SQ9945BEY-T1-GE3

Part Number: SQ9945BEY-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, NN CH, W/D, 60 V, 6 A, SO8

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Docket:
SQ9945BEY
Vishay Siliconix
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) per leg Configuration 60 0.064 0.082 6 Dual

Specifications:

  • Continuous Drain Current Id: 5.4 A
  • Drain Source Voltage Vds: 60 V
  • Module Configuration: Dual
  • Number of Pins: 8
  • On Resistance Rds(on): 0.045 Ohm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation: 4 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 2 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel

RoHS: Yes

Andere Namen:

SQ9945BEYT1GE3, SQ9945BEY T1 GE3