Datasheet SIZ900DT-T1-GE3 - Vishay MOSFET, NN CH, 30 V, PPAIR 6X5 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, NN CH, 30 V, PPAIR 6X5

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Docket:
New Product
SiZ900DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
FEATURES PRODUCT SUMMARY

Specifications:

• Continuous Drain Current Id: 24 A
• Drain Source Voltage Vds: 30 V
• Module Configuration: Dual
• Number of Pins: 8
• On Resistance Rds(on): 0.0059 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 48 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: PowerPAIR
• Transistor Polarity: N Channel

RoHS: Yes

Andere Namen:

SIZ900DTT1GE3, SIZ900DT T1 GE3