Datasheet SI4909DY-T1-GE3 - Vishay MOSFET, PP CH, W/D DIOD, 40 V, 8 A, SO8 — Datenblatt
Part Number: SI4909DY-T1-GE3
Detaillierte Beschreibung
Manufacturer: Vishay
Description: MOSFET, PP CH, W/D DIOD, 40 V, 8 A, SO8
Docket:
New Product
Si4909DY
Vishay Siliconix
Dual P-Channel 40 V (D-S) MOSFET
FEATURES
Specifications:
- Continuous Drain Current Id: -8 A
- Drain Source Voltage Vds: -40 V
- Module Configuration: Dual
- Number of Pins: 8
- On Resistance Rds(on): 0.021 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation: 3.2 W
- Rds(on) Test Voltage Vgs: -10 V
- Transistor Case Style: SOIC
- Transistor Polarity: P Channel
RoHS: Yes
Andere Namen:
SI4909DYT1GE3, SI4909DY T1 GE3