Datasheet SI4650DY-T1-GE3 - Vishay MOSFET, NN CH, SCH DIODE, 30 V, SO8 — Datenblatt

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Manufacturer: Vishay

Description: MOSFET, NN CH, SCH DIODE, 30 V, SO8

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Docket:
Si4650DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) Channel-1 Channel-2 30 30 RDS(on) () 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0 8.0 8.0 8.0 10.5 10.5

Specifications:

• Continuous Drain Current Id: 8 A
• Drain Source Voltage Vds: 30 V
• Module Configuration: Dual
• Number of Pins: 8
• On Resistance Rds(on): 0.014 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 3.1 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel

RoHS: Yes

Andere Namen:

SI4650DYT1GE3, SI4650DY T1 GE3