Datasheet SIR662DP-T1-GE3 - Vishay MOSFET, N CH, DIO, 60 V, 60 A, PPK SO8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N CH, DIO, 60 V, 60 A, PPK SO8

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Docket:
New Product
SiR662DP
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Continuous Drain Current Id: 60 A
• Drain Source Voltage Vds: 60 V
• Number of Pins: 8
• On Resistance Rds(on): 0.0022 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 104 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel

RoHS: Yes

Andere Namen:

SIR662DPT1GE3, SIR662DP T1 GE3