Datasheet SI4463CDY-T1-GE3 - Vishay MOSFET, P CH, W/D, 20 V, 18.6 A, SO8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P CH, W/D, 20 V, 18.6 A, SO8

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Docket:
New Product
Si4463CDY
Vishay Siliconix
P-Channel 2.5 V (G-S) MOSFET
FEATURES

Specifications:

• Continuous Drain Current Id: -18.6 A
• Drain Source Voltage Vds: -20 V
• Number of Pins: 8
• On Resistance Rds(on): 0.006 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 5 W
• Rds(on) Test Voltage Vgs: -10 V
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel

RoHS: Yes

Andere Namen:

SI4463CDYT1GE3, SI4463CDY T1 GE3