Datasheet TPC8120 - Toshiba MOSFET, P CH, 30 V, 16 A, SOP8 — Datenblatt

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Manufacturer: Toshiba

Description: MOSFET, P CH, 30 V, 16 A, SOP8

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Docket:
TPC8120
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS)
TPC8120
Lithium Ion Battery Applications Power Management Switch Applications
· · · · · Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 2.6 m (typ.) High forward transfer admittance: |Yfs| =80 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm

Specifications:

• Continuous Drain Current Id: -18 A
• Drain Source Voltage Vds: -30 V
• Number of Pins: 8
• On Resistance Rds(on): 0.0026 Ohm
• Power Dissipation: 1.9 W
• Rds(on) Test Voltage Vgs: -10 V
• Transistor Case Style: SOP
• Transistor Polarity: P Channel

RoHS: Yes