Datasheet TK4A60DA - Toshiba MOSFET, N CH, 600 V, 3.5 A, TO220SIS — Datenblatt

Toshiba TK4A60DA

Part Number: TK4A60DA

Detaillierte Beschreibung

Manufacturer: Toshiba

Description: MOSFET, N CH, 600 V, 3.5 A, TO220SIS

Docket:
TK4A60DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS)
TK4A60DA
Switching Regulator Applications
· · · · Low drain-source ON resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: Yfs = 2.2 S (typ.) Low leakage current: IDSS = 10 A (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm

Specifications:

Continuous Drain Current Id: 3.5 A
Drain Source Voltage Vds: 600 V
Number of Pins: 3
On Resistance Rds(on): 1.7 Ohm
Power Dissipation: 35 W
Rds(on) Test Voltage Vgs: 10 V
Transistor Case Style: TO-220
Transistor Polarity: N Channel

RoHS: Yes

Accessories:

Fischer Elektronik - WLK 5
National Semiconductor - LM5101CMA