Datasheet TK20E60U - Toshiba MOSFET, N CH, 600 V, 20 A, TO220 — Datenblatt

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Manufacturer: Toshiba

Description: MOSFET, N CH, 600 V, 20 A, TO220

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Docket:
TK20E60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS )
TK20E60U
Switching Regulator Applications
· · · · Low drain-source ON resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

Specifications:

• Continuous Drain Current Id: 20 A
• Drain Source Voltage Vds: 600 V
• Number of Pins: 3
• On Resistance Rds(on): 0.19 Ohm
• Power Dissipation: 190 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: TO-220
• Transistor Polarity: N Channel

RoHS: Yes

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