Datasheet PMDPB65UP - NXP MOSFET, PP CH, 20 V, 3.5 A, SOT1118 — Datenblatt

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Manufacturer: NXP

Description: MOSFET, PP CH, 20 V, 3.5 A, SOT1118

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Docket:
PMDPB65UP
20 V, 3.5 A dual P-channel Trench MOSFET
Rev.

2 -- 8 March 2011 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Continuous Drain Current Id: -3.5 A
• Drain Source Voltage Vds: -20 V
• Module Configuration: Dual P Channel
• Number of Pins: 8
• On Resistance Rds(on): 0.058 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 520 mW
• Rds(on) Test Voltage Vgs: -4.5 V
• Threshold Voltage Vgs Typ: -700 mV
• Transistor Polarity: P Channel

RoHS: Yes