Datasheet C4D05120E - Cree SILICON CARBIDE (SIC) SCHOTTKY DIODE, 8.2 A, 1200 V, TO-220 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Cree

Description: SILICON CARBIDE (SIC) SCHOTTKY DIODE, 8.2 A, 1200 V, TO-220

Specifications:

• Diode Type: SiC Schottky
• Forward Current If(AV): 8.2 A
• Forward Surge Current Ifsm Max: 46 A
• Forward Voltage VF Max: 1.8 V
• Repetitive Reverse Voltage Vrrm Max: 1200 V

RoHS: Yes