Datasheet FDMB3800N - Fairchild MOSFET, NN CH, 30 V, 4.8 A, MIRCOFET3X1.9 — Datenblatt

Part Number: FDMB3800N

Detaillierte Beschreibung

Manufacturer: Fairchild

Description: MOSFET, NN CH, 30 V, 4.8 A, MIRCOFET3X1.9

Docket:
FDMB3800N Dual N-Channel PowerTrench® MOSFET
October 2006
FDMB3800N Dual N-Channel PowerTrench® MOSFET
30V, 4.8A, 40m Features General Description
Max rDS(on) = 40m at VGS = 10V, ID = 4.8A Max rDS(on) = 51m at VGS = 4.5V, ID = 4.3A Fast switching speed Low gate Charge High performance trench technology for extremely low rDS(on) High power and current handling capability.

RoHS Compliant

Specifications:

Continuous Drain Current Id: 4.8 A
Drain Source Voltage Vds: 30 V
Module Configuration: Dual
Number of Pins: 8
On Resistance Rds(on): 0.032 Ohm
Operating Temperature Range: -55°C to +150°C
Power Dissipation: 1.6 W
Rds(on) Test Voltage Vgs: 10 V
Threshold Voltage Vgs Typ: 1.9 V
Transistor Case Style: MicroFET3x1.9
Transistor Polarity: N Channel

RoHS: Yes

Accessories:

Analog Devices - ADP3623ARDZ-RL
International Rectifier - AUIRS2112S
Taiwan Semiconductor - TSM2314CX