Datasheet CA3127MZ - Intersil — Datenblatt

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Manufacturer: Intersil

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CA3127
Data Sheet June 5, 2006 FN662.5
High Frequency NPN Transistor Array
The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate.

Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual transistors and a separate substrate connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors.

Specifications:

• Collector Emitter Voltage V(br)ceo: 24 V
• DC Collector Current: 20 mA
• DC Current Gain: 90
• Module Configuration: Five
• Power Dissipation: 85 mW
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 1.15 GHz

RoHS: Yes