Datasheet MUN5111DW1T1G - ON Semiconductor BRT TRANSISTOR, 50 V, 10K/10KOHM, SOT-363 — Datenblatt

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Manufacturer: ON Semiconductor

Description: BRT TRANSISTOR, 50 V, 10K/10KOHM, SOT-363

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Docket:
MUN5111DW1T1G Series
Preferred Devices
Dual Bias Resistor Transistors
PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor.

These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1G series, two BRT devices are housed in the SOT-363 package which is ideal for low-power surface mount applications where board space is at a premium.

Specifications:

• Collector Emitter Voltage V(br)ceo: 50 V
• DC Collector Current: -100 mA
• DC Current Gain: 60
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 187 mW
• Transistor Polarity: PNP

RoHS: Yes