Datasheet BUK9Y12-55B - NXP MOSFET, N CH, 55 V, 61.8 A, LFPAK — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, N CH, 55 V, 61.8 A, LFPAK

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Docket:
BUK9Y12-55B
N-channel TrenchMOS logic level FET
Rev.

04 -- 7 April 2010 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Continuous Drain Current Id: 61.8 A
• Drain Source Voltage Vds: 55 V
• Number of Pins: 4
• On Resistance Rds(on): 0.0081 Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation: 106 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 1.65 V
• Transistor Case Style: LFPAK
• Transistor Polarity: N Channel

RoHS: Y-Ex

Andere Namen:

BUK9Y1255B, BUK9Y12 55B