Datasheet IRFH8337TR2PBF - International Rectifier MOSFET, N CH, W DIODE, 30 V, 12 A, PQFN56 — Datenblatt

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Manufacturer: International Rectifier

Description: MOSFET, N CH, W DIODE, 30 V, 12 A, PQFN56

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Docket:
PD - 97646A
IRFH8337PbF
HEXFET® Power MOSFET
VDS VGS
max

Specifications:

• Continuous Drain Current Id: 16.2 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 8
• On Resistance Rds(on): 0.0103 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 27 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 1.8 V
• Transistor Case Style: QFN
• Transistor Polarity: N Channel

RoHS: Yes