Datasheet IRFH8325TR2PBF - International Rectifier MOSFET, N CH, W DIODE, 30 V, 25 A, PQFN56 — Datenblatt

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Manufacturer: International Rectifier

Description: MOSFET, N CH, W DIODE, 30 V, 25 A, PQFN56

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Docket:
PD - 96359A
IRFH8325PbF
HEXFET® Power MOSFET
VDS Vgs
max

Specifications:

• Continuous Drain Current Id: 25 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 8
• On Resistance Rds(on): 0.0041 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 54 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 1.8 V
• Transistor Case Style: QFN
• Transistor Polarity: N Channel

RoHS: Yes